我司HDM16A200S完全替换IXYS二极管DMA200x1600NA， 以下是该产品的参数规格信息。
FEATURES
l Two fully independent diodes
l Fully insulated package
l with high operation junction temperature (175℃ Tj )
l Lo forward voltage drop
l Optimized for power conversion:welding and industrial
SMPS applications
l Easy to use and parallel
l Industry standard outline
l Designed and qualified for industrial level
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ABSOLUTE MAXIMUM RATINGS
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PARAMETE
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SYMBOL
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TEST CONDITIONS
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MAX
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UNIT
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Cathode to anode voltage
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VR
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1600
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V
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Continuous forward current per diode
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IF
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TC=100℃
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100
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A
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Single pulse forward current per diode
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IFSM
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TC=25℃
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2500
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A
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RMS isolation voltage
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Visol
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Any terminal to case,t=1 minute
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2500
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V
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Maximum junction temperature
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TJ
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-55to175
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℃
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Maximum case temperature
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TJ
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150
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℃
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Storage temperture
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Tstg
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-55to150
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℃
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ELECTRICAL SPECIFICATIONS
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PARAMETE
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SYMBOL
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TEST CONDITIONS
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MIN
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TYP
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MAX
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UNITS
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Cathode to anode breakdown voltage
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VBR
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IR=100µA
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1600
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-
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-
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V
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Forward voltage
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VFM
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IF=100 A TJ=25℃
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1.15
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IF=100A TJ=125℃
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1.0
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Reverse leakage current
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IRM
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VR=VR rated TJ=25℃
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10
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uA
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VR=VR rated TJ=175℃
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5
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mA
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THERMAL-MECHANICAL SPECIFICATIONS
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PARAMETE
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SYMBOL
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TEST CONDITIONS
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MIN
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TYP
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MAX
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UNITS
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Junction to case ,single leg conducting
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Rthjc
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-
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-
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0.45
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℃/w
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Junction to case ,both leg conducting
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-
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-
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0.27
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Case to heatsink
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Rthcs
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Flat,greased surface
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0.075
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Weight
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30
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g
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Mounting torque
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1.3
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Nm
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Case style
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SOT-227
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